The CMP process begins with the wafer being placed on a rotating platen that is covered with a polishing pad. The CMP Slurry is then dispensed onto the polishing pad, and the wafer is pressed against the pad with a controlled force. The rotation of the platen and the movement of the wafer against the pad causes the abrasive particles in the slurry to rub against the surface of the wafer, removing material and creating a smooth, uniform surface.
One of the key challenges in the CMP process is controlling the removal rate of material from the wafer. This is where the properties of the CMP Slurry play a critical role. If the removal rate is too high, it can cause damage to the underlying layers of the wafer, while if the removal rate is too low, it can lead to poor planarization and non-uniform surfaces.
Read More @ https://cmibloginsight.blogspot.com/2023/04/the-science-of-cmp-slurry-exploring-key.html
